Eruptive history of La Poruna scoria cone, Central Andes, Northern Chile
BULLETIN OF VOLCANOLOGY
Authors: Marin, Carolina; Rodriguez, Ines; Godoy, Benigno; Gonzalez-Maurel, Osvaldo; Le Roux, Petrus; Medina, Eduardo; Bertin, Daniel
Abstract
New stratigraphic, lithological and petrographic analyses of La Poruna scoria cone (21 degrees 53 ' S-68 degrees 30 ' W, Central Andes, northern Chile) allow the reconstruction of the eruptive sequence of this monogenetic cone. Petrographic and lithological characteristics allow us to identify three main lithostratigraphic units at La Poruna scoria cone. The first unit consists of agglutinated lapilli, spatter beds, and clastogenic lavas that are related to the construction of the cone. The other two units are associated with a lava flow field and consist of flow of andesitic composition, which differ both in their degree of weathering and in their development of channel, surface, and internal structures (e.g., levees, ogives, and joints). With these lithostratigraphic analyses, we interpret that the construction of La Poruna occurred during four main eruption phases involving Strombolian, Hawaiian, and transitional eruptive styles. Furthermore, differences in the degree of erosion, alteration, and weathering of the lithostratigraphic units in the lava field of La Poruna suggest that this flow field was formed during two eruptive events. The excellent outcrop conditions and preservation state of the volcanic products of La Poruna allow new stratigraphic insights that advance the wider and more general understanding and the dynamics of this important type of volcanism and the potential hazards of a scoria cone eruption. The polycyclic style of the eruption needs to be included in the hazards assessment of these centers type, especially when the cone is associated with structures that can be reactivated. This process could correspond to a second phase of activity, involving ash fall, bomb, and lava emission.
The fabrication of LiNbO(3)memristors for electronic synapses using oxygen annealing
NANOTECHNOLOGY
Authors: Liang, Xiang; Chen, Xuhao; Yang, Xiaoni; Ni, Jing
Abstract
Based on the LiNbO3(LN) single crystal thin film prepared using Ar(+)etching, an LN thin film memristor was fabricated by oxygen annealing. Atomic force microscope, scanning electron microscope and electron paramagnetic resonance test results show that the method uniformly reduces the amount of oxygen vacancies on the surface of the material. The current-voltage scanning (I-V scanning), retention and endurance test results show that this method effectively reduces the possibility of breakdown and increases the retention and endurance performance of the device. By adjusting the parameters of the electric pulse, the annealed sample successfully emulated spike-rate dependent plasticity, pulse-paired facilitation, post-tetanic potentiation, Ebbinghaus forgetting curve and the spike-time dependent plasticity. These results indicate that the device prepared herein could be used as an electronic synapse in the field of brain-like neuromorphic computing systems.