Magic™ Anti-AR (Phospho S210, 213) monoclonal antibody, clone 267D246.3

Polysulfone (PSf) composite ultrafiltration membranes were subjected to Ar/O-2 plasma assisted oxygen activation and then coated with various forms of metallic glass (W50Ni25B25, Zr60Cu25Al10Ni5, and Pd74Si14Cu12). The activated oxygen treated PSf ultrafiltration membrane was strongly hydrophilic, with pure water flux (PWF) of 350.7 L m(-2) h(-1) and bovine serum albumin (BSA) rejection of 83%. The application of metallic glass (MG) to the surface of the polysulfone composite membrane using low-power radio-frequency magnetron sputtering improved the BSA rejection rate (ranging from 98.6 to 99.9%) with only a slight reduction in PWF: tungsten based MG (321.5 L m(-2) h(-1)), zirconium-based MG (215.6 L m(-2) h-1), and palladium-based MG (181.3 L m(-2) h(-1)). The membrane with the tungsten-based coating achieved remarkable PWF, BSA rejection, and antifouling performance, due primarily to high surface hydrophilicity (water contact angle of 24.2 degrees) and a strongly negative surface charge. Overall, the proposed metallic glass/polysulfone composite membranes achieved moderately high PWF and protein rejection with incredible antifouling competence, even under extended (multi-cycle) fouling conditions.

The complex dielectric functions of unhydrogenated amorphous silicon (a-Si) thin films, grown by the radio-frequency magnetron-sputtering (RFMS) technique, at room temperature, upon glass substrates, have been accurately determined by using ex-situ variable-angle spectroscopic ellipsometry, in the photon energy range from 0.73 to 4.96 eV (i.e. 1700 to 250 nm). Mass density of sputter-deposited amorphous silicon films was changed by a simple argon-working-gas pressure control: higher Ar gas pressure results in reduced film mass density, or increased porosity. The optical response of the hydrogen-less amorphous silicon films under study can be successfully parameterized employing a single, Kramers-Kronig (K-K)-consistent Cody-Lorentz (CL) oscillator dispersion model; the Urbach absorption tail included in the CL model, is certainly needed in the present case of hydrogen-free sputtered a-Si films. It has been unambiguously demonstrated that the obtained values of CL-model parameters are reasonably correlated with the particular argon-gas sputtering pressure utilized for each deposition. The behavior of these best-fit CL-model parameters with varying argon pressure from 0.13Pa up to 4.4Pa, can be clearly understood in terms of the effect of the existing micro-voids, within the as-deposited a-Si film material.