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In this study, a low-thermal-budget microwave irradiation (MWI) technique was applied as a post-deposition annealing (PDA) process to lower the trap densities that exist in transparent amorphous oxide semiconductor thin film transistors (TAOS TFTs). As channel layers of TAOS TFTs, two types of indium gallium zinc oxide (IGZO) with different compositions as well as aluminum zinc tin oxide (AZTO) and zinc oxide (ZnO) thin films were deposited with various thicknesses through radio frequency (RF) magnetron sputtering at 25 degrees C. Cost-effective and energy-efficient MWI was conducted to enhance the electrical performance of transistors by removing traps and defects. The electrical characteristics of IGZO (1:1:1 and 4:2:3)-, ZnO-, and AZTO-based TFTs treated by MWI were evaluated by measuring the transfer curves. In particular, the relation between the interface trap density (D-it) and bulk trap density (N-t) of microwave-irradiated TFTs was quantitatively evaluated by the subthreshold swing (SS) variation based on channel thickness. The results indicated that of the four types of channel layers, the performance of IGZO (4:2:3) TFTs was the best and that of AZTO TFTs was the worst, in terms of electrical properties such as on/off current ratio, mobility, SS, and trap density. In particular, it was demonstrated that the trap density of MWI-treated TAOS TFTs was much lower than that of conventional furnace annealing (CFA)-treated devices. Despite the short annealing duration of a few minutes, the MWI more effectively reduced the trap sites than did the furnace treatment, and significantly enhanced the electrical properties of the TAOS TFTs. It is expected that high-performance TAOS TFTs can be fabricated by applying MWI, which is a highly efficient and low-thermal-budget annealing method, to the PDA process and can thus reduce trap density.

A multi-machine study has been carried out to investigate the impact of a strongly bounded wave propagation domain on the Lower Hybrid current drive, a condition which occurs principally in high aspect ratio tokamaks. In this regime, the condition of kinetic resonance can be far above the upper boundary of the propagation domain, and may not be achieved by the usual toroidal upshift. Therefore no tail of fast electrons can be pulled out from the thermal bulk. Nevertheless, while tokamak plasmas are in principle almost transparent to the wave in this regime so-called "unbridgeable spectral gap", full current drive is well achieved for the two tokamaks considered in this study, TRIAM-1M (Zushi et al. Nucl Fusion 43:1600, 2003) and WEST (Bourdelle et al. Nucl Fusion 55:063017, 2015), both characterized by a very large aspect ratio R/a > 5:5. The case of the high aspect ratio tokamak HL-2A (Liu et al. Nucl Fusion 45:S239, 2005) for which the wave propagation domain has also an upper boundary, but close to the resonance condition, is considered by comparison. First principles modeling of the rf-driven current and the fast electron bremsstrahlung using the ALOHA/C3PO/LUKE/R5-X2 chain of codes shows unambiguously that the spectral gap must be already filled at the separatrix in order to reproduce quantitatively observations and some important parametric dependencies. This result is an important milestone in the physics understanding of the Lower Hybrid current drive, highlighting the existence of a powerful and likely universal alternative mechanism to bridge the spectral gap, that is not related to toroidal magnetic refraction. With an initially broad power spectrum, lobes with low parallel refractive indexes that carry most of the plasma current can be absorbed in almost single pass, restoring the full validity of the ray-tracing approximation for describing the propagation of the Lower Hybrid wave in cold plasmas.