Human RF IgA ELISA Kit

Name: Human RF IgA ELISA Kit
SKU: DEIA1811
Rating: 5 (1 reviews)

Regulatory status: For research use only, not for use in diagnostic procedures.

COA

SDS

Datasheet

Summary

Sample

Serum, plasma

Species Reactivity

Human

Detection Method

iELISA

Intended Use

Rheumatoid Factor IgA is an indirect solid phase enzyme immunoassay (ELISA) for the quantitative measurement of IgA class rheumatoid factor antibodies in human serum or plasma.
This kit is intended for research use only.

Contents of Kit

Storage

1. Store the kit at 2-8 °C.
2. Keep microplate wells sealed in a dry bag with desiccants.
3. The reagents are stable until expiration of the kit.
4. Do not expose test reagents to heat, sun or strong light during storage and usage.
5. Diluted sample buffer and wash buffer are stable for at least 30 days when stored at 2-8 °C.

Precision

Statistics for coefficients of variation (CV) were calculated for each of three samples from the results of 24 determinations in a single run for Intra-Assay precision. Run-to-run precision was calculated from the results of 5 different runs with 6 determinations of each sample:

Sensitivity

The lower detection limit for Rheumatoid Factor IgA was determined at 1.0 U/ml.

Citations

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Documents

pdf COA

pdf SDS

pdf Datasheet

QA & Reviews

Customer Reviews

References

RF E-field Sensing Using Rydberg Atom-Based Microwave Electrometry

MAPAN-JOURNAL OF METROLOGY SOCIETY OF INDIA

Authors: Monika; Rawat, Harish Singh; Dubey, Satya Kesh

Abstract

In this work, a microwave field is sensed by rubidium atoms instead of a conventional antenna like dipole or horn antenna. Microwave field is projected onto a glass cell containing Rb vapors which act as an antenna in this case. A four-level ladder atomic system is considered for analytical solution, and E-field measurement is reported by utilizing quantum phenomena like electromagnetically induced transparency and Autler-Townes splitting. It has been shown that atoms can also sense weak microwave field with this approach. The amplitude measurement of microwave E-field is changed to frequency measurement, and E-field is evaluated by monitoring the frequency difference between two EIT peaks. Measurement results are reported for variable input microwave power at frequency 15.09 GHz varying from 12.5 mu W to 4 mW generated from synthesized signal generator. Moreover, the effect on the EIT resonance due to the distance variation of the source antenna is also discussed. The microwave frequency is detuned from the resonant frequency, and results are reported in this work.

Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure

SILICON

Authors: Pratap, Yogesh; Verma, Jay Hind Kumar

Abstract

Multi-gate devices such as double gate, FinFET and Gate-All-Around (GAA) are potential candidates to achieve the performance expected by semiconductor association. This paper presents an analog/RF performance and linearity distortion analysis for an advance multigate structure named Double Gate-All-Around (DGAA) MOSFET. Temperature dependent characteristics of the DGAA MOSFET have also been investigated in detail from 200 K to 400 K. A comparative analysis between Gate-All-Around (GAA) and DGAA MOSFETs with impact of silicon film thickness is analyzed by using 3-D ATLAS TCAD device simulator. It is demonstrated that depending on gate voltage, DGAA MOSFET has larger value of drain current (I-ds), transconductance (g(m)) and gain. Results demonstrate that drain current, transconductance, device gain and transconductance to drain current ratio (g(m)/I-ds) improves when temperature is decreased. DGAA MOSFET shows improvement in analog/RF performance, suppressed Short Channel Effects (SCEs) and harmonics distortions due to more gate controllability on the channel charge.