Anti-FTO (N-terminal) polyclonal antibody

A novel structure is proposed in this work for the efficiency enhancement of experimentally designed Sb2Se3 solar cell by device optimization, the band offset engineering, and Hole Transport Layer (HTL) with the aid of numerical modeling in SCAPS-1D simulator. J- V result of an experimental device was replicated in SCAPS-1D to validate simulated results. After validation of experimental solar cell result, device optimization of Sb2Se3/ZnO/FTO solar cell was performed and after device optimization, power conversion efficiency (PCE) of solar cell jumps from 3.59% to 11.29%. The PCE was further enhanced to value 14.46% by adjusting the band offset between Sb2Se3/ZnO interface. This task was accomplished by introducing Sn doped ZnO layer. Lastly, different HTL layers was applied to Sb2Se3/Zn(Sn, O)/FTO solar cell and among them CZTSe as HTL gave highest values of Fill Factor (FF), PCE, open circuit voltage (V-OC) and short circuit current (J(SC)), 81.18% and 18.50%, 0.66 V and 34.66 mA/cm(2).

A new strategy has been successfully developed for highly efficient copper sulfide/lead sulfide (Cu2S/PbS) counter electrodes (CEs) for quantum-dot-sensitized solar cells (QDSSCs). PbS nanoparticles were grown by successive ionic layer adsorption and reaction (SILAR) technique for various cycles (from 1 to 4) on electrochemically deposited Cu2S nanosheets. All the Cu2S and Cu2S/PbS CEs showed petal-like morphology and nanosized PbS nanoparticles were deposited over the Cu2S nanosheets. All FTO/Cu2S/PbS CEs exhibited superior electrocatalytic activity than FTO/Pt and FTO/Cu2S CEs. In particular, QDSSCs with FTO/Cu2S/PbS CE (3 SILAR cycles) exhibited extremely high short-circuit current density (18.08 mA cm(-2)) and fill factor (53.55%), resulting in a significantly enhanced power conversion efficiency as high as 5.28%. This is because the FTO/Cu2S/PbS CE not only exhibits the cascaded, stepwise energy level configuration, which enhances the fast charge transportation, but also serves as a blocking layer to prevent electrons from returning from the electrolyte to the Cu2S. Furthermore, FTO/Cu2S/PbS exhibited excellent electrochemical stability unlike FTO/Cu2S, owing to the passivation of PbS.