Human FTO blocking peptide (CDBP1304)

Synthetic Human FTO blocking peptide for BL

Product Overview
Blocking peptide for anti-FTO antibody
Target
FTO
Nature
Synthetic
Species Reactivity
Human
Tag/Conjugate
Unconjugated
Application Notes
For in vitro research use only. Not intended for any diagnostic or therapeutic purpose. Not suitable for human or animal consumption.
Procedure
None
Format
Liquid
Concentration
200 μg/ml
Size
50 μg
Buffer
PBS containing 0.02% sodium azide
Preservative
0.02% Sodium Azide
Storage
Store at -20℃, stable for one year.
UniProt ID
Antigen Description
This gene is a nuclear protein of the AlkB related non-haem iron and 2-oxoglutarate-dependent oxygenase superfamily but the exact physiological function of this gene is not known. Other non-heme iron enzymes function to reverse alkylated DNA and RNA damage by oxidative demethylation. Studies in mice and humans indicate a role in nervous and cardiovascular systems and a strong association with body mass index, obesity risk, and type 2 diabetes.
Function
DNA-N1-methyladenine dioxygenase activity; DNA-N1-methyladenine dioxygenase activity; ferrous iron binding; metal ion binding; oxidative DNA demethylase activity; oxidative DNA demethylase activity; oxidative RNA demethylase activity; oxidative RNA demeth
Synonyms
FTO; fat mass and obesity associated; alpha-ketoglutarate-dependent dioxygenase FTO; protein fto; protein fatso; fat mass and obesity-associated protein; AW743446; mKIAA1752;

Citations


Have you cited CDBP1304 in a publication? Let us know and earn a reward for your research.

Related Products


Customer Reviews


Write a review, share your experiences with others and get rewarded !
Product Name Cat. No. Applications Host Species Datasheet Price Add to Basket
Product Name Cat. No. Applications Host Species Datasheet Price Add to Basket

References


Enhancing Water-Splitting Efficiency Using a Zn/Sn-Doped PN Photoelectrode of Pseudocubic alpha-Fe(2)O(3)Nanoparticles

NANOSCALE RESEARCH LETTERS

Authors: Yang, Jie-Xiang; Meng, Yongtao; Tseng, Chuan-Ming; Huang, Yan-Kai; Lin, Tung-Ming; Wang, Yang-Ming; Deng, Jin-Pei; Wu, Hsiang-Chiu; Hung, Wei-Hsuan

alpha-Phase hematite photoelectrodes can split water. This material is nontoxic, inexpensive, and chemically stable; its low energy gap of 2.3 eV absorbs light with wavelengths lower than 550 nm, accounting for approximately 30% of solar energy. Previously, we reported polyhedral pseudocubic alpha-Fe(2)O(3)nanocrystals using a facile hydrothermal route to increase spatial charge separation, enhancing the photocurrent of photocatalytic activity in the water-splitting process. Here, we propose a p-n junction structure in the photoanode of pseudocubic alpha-Fe(2)O(3)to improve short carrier diffusion length, which limits its photocatalytic efficiency. We dope Zn on top of an Fe(2)O(3)photoanode to form a layer of p-type semiconductor material; Sn is doped from the FTO substrate to form a layer of n-type semiconductor material. The p-n junction, n-type Fe2O3:Sn and p-type Fe2O3:Zn, increase light absorption and charge separation caused by the internal electric field in the p-n junction.

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

ACS OMEGA

Authors: Ghazala, Magdy S. Abo; Othman, Hosam A.; El-Deen, Lobna M. Sharaf; Nawwar, Mohamed A.; Kashyout, Abd El-hady B.

Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 degrees C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV-vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

Online Inquiry

Name:
Phone: *
E-mail Address: *
Technology Interest:
Type of Organization:
Service & Products Interested: *
Project Description:
Verification code
Click image to refresh the verification code.

Online Inquiry

  Interested in larger quantities ? request a quote!
  Protocol may be improved. Please feel free to contact us to obtain the latest version.!

Ordering Information

Payment methods we support:
Invoice / Purchase Order
Credit card

OUR PROMISE TO YOU Guaranteed product quality expert customer support

Inquiry Basket