Anti-FTO (C-terminal) polyclonal antibody

The main efficiency loss is caused by an intensive recombination process at the interface of fluorine-doped tin oxide (FTO) and electrolyte in dye-sensitized solar cells. Electrons from the photoanode can be injected back to the redox electrolyte and, thus, can reduce the short circuit current. To avoid this, the effect of the electron blocking layer (EBL) was studied. An additional thin film of magnetron sputtered TiO2 was deposited directly onto the FTO glass. The obtained EBL was characterized by atomic force microscopy, scanning electron microscopy, optical profilometry, energy dispersive spectroscopy, Raman spectroscopy and UV-VIS-NIR spectrophotometry. The results of the current-voltage characteristics showed that both the short circuit current (I-sc) and fill factor (FF) increased. Compared to traditional dye-sensitized solar cell (DSSC) architecture, the power conversion efficiency (eta) increased from 4.67% to 6.07% for samples with a 7 x 7 mm(2) active area and from 2.62% to 3.06% for those with an area of 7 x 80 mm(2).

CoxFe3-xO4 thin films were elaborated by electrodeposition under a static magnetic field on fluorine-doped tin oxide (FTO) substrates followed by an air annealing at 500 degrees C for 24 h. The XRD analysis revealed cubic spinel structure with an average crystallite size ranging from 40 to 46 nm. Moreover, the SEM and AFM observations indicated a noticeable magnetic field effect on the surface morphology. The optical band gap deduced from the transmittance data is around 3.4 eV. The magneto-optical measurements indicated very interesting spontaneous Faraday rotation of 4628 circle. The successful elaboration of partially hard magnetic cobalt ferrite thin films offers a new route for high potential exploitation of the spontaneous Faraday rotation effect, which is necessary to develop advanced and miniaturized non-reciprocal optical devices.