Anti-Human FGA (a.a. 36-218) Polyclonal antibody

Short tandem repeats (STRs) play a vitally important role in forensics. Population data is needed to improve the field. There is currently no large population data-based data set in Chamdo Tibetan. In our study, the allele frequencies and forensic statistical parameters of 18 autosomal STR loci (D5S818, D21S11, D7S820, CSF1PO, D2S1338, D3S1358, VWA, D8S1179, D16S539, PentaE, TPOX, TH01, D19S433, D18S51, FGA, D6S1043, D13S317, and D12S391) included in the DNATyper (TM) 19 kit were investigated in 2249 healthy, unrelated Tibetan subjects living in Tibet Chamdo, Southwest China. The combined power of discrimination and the combined probability of exclusion of all 18 loci were 0.9999999999999999999998174 and 0.99999994704, respectively. Furthermore, the genetic relationship between our Tibetan group and 33 previously published populations was also investigated. Phylogenetic analyses revealed that the Chamdo Tibetan population is more closely related genetically with the Lhasa Tibetan group. Our results suggest that these autosomal STR loci are highly polymorphic in the Tibetan population living in Tibet Chamdo and can be used as a powerful tool in forensics, linguistics, and population genetic analyses.

In this work, we investigated the effect of forming gas annealing (FGA, 5% H-2/95% N-2, 250 degrees C to 450 degrees C) on border trap density in high-k/InGaAs metal-oxide-semiconductor (MOS) systems using accumulation frequency dispersion and capacitance-voltage (CV) hysteresis analysis. It is demonstrated that the optimum FGA temperature that reduces the accumulation frequency dispersion is 350 degrees C for HfO2/n-InGaAs and 450 degrees C for Al2O3/n-InGaAs MOS system. Volume density of border traps (N-bt) is estimated using the accumulation frequency dispersion based on a distributed model for border traps. It is shown that for HfO2/n-InGaAs MOS system, N-bt is reduced from 9.4 x 10(19) cm(-3) eV(-1) before FGA to 6.3 x 10(19) cm(-3) eV(-1) following FGA at 350 degrees C. For the case of Al2O3/n-InGaAs MOS system, Nbt is reduced from 5.7 x 10(19) cm(-3) eV(-1) for no FGA to 3.4 x 10(19) cm(-3) eV(-1) for FGA at 450 degrees C. Furthermore, it is shown that the most pronounced reduction in border trap density estimated from CV hysteresis analysis is observed at the same optimum FGA temperature that reduces the accumulation frequency dispersion, indicating that these two techniques for border trap analysis are correlated. (C) 2017 Elsevier B.V. All rights reserved.