Anti-Fibrinogen polyclonal antibody

Fine Granular Area (FGA) and White Etching Cracks (WEC) are two types of fatigue damage phenomena which are characterised by the development of cracks accompanied by a local microstructural transformation. The resulting microstructures share many properties, chiefly a strong reduction in grain size. In this study, the thickness of the transformed zones along the crack formed during FGA and WEC experiments is investigated. It is shown that in WEC, similar to earlier results on the FGA, the size of the transformed zones increases with increasing crack length. For further analysis of the more complex WEC case, an approach is presented that uses the results of a critical plane analysis for the calculation of key figures in fracture mechanics. The results are shown to be very similar to those of the FGA. Drawing on these and earlier results, it is proposed that a common mechanism of WEC and FGA formation exists. In addition, some important differences of the two phenomena are explained within the framework of the common mechanism.

The correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks is experimentally assessed. Samples fabricated employing forming gas annealing (FGA) or substrate air exposure to obtain different densities of defects were thoroughly characterized and the results were compared with previous literature on the topic. Results indicate a lack of correlation between capacitancevoltage hysteresis and accumulation capacitance dispersion with frequency, suggesting that defects with remarkably different kinetics are involved in each phenomenon. This is assessed through the dependence of the capacitance-voltage hysteresis with DC bias and stress time, observing that permanent interface defect depassivation under bias has no effect on the hysteresis width after stress. Overall, capacitance-voltage hysteresis probes slow trapping mechanisms throughout the oxide and the bandgap, which are consistent with the negative charge trapping characteristic of the currenttime curves for FGA samples at constant voltage stress. Instead, accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times that can be linked to the stress induced leakage current of air exposed samples under constant DC stress. Experimental results indicate that each effect must be assessed separately due to the large difference in the kinetics of the probed defects. Published by AIP Publishing.