Anti-DNTT monoclonal antibody, clone TQ261

We here report optimization of thin-film fabrication of 2-(4-ethyloctyl) dinaphtho[2,3-b:2',3'-f]thieno [3,2-b] thiophene (2-EO-DNTT), a soluble DNTT derivative, by spin-coating. The key to fabricate suitable thin films for high-performance TFTs is to control the nucleation and crystallites growth on the substrate during spin-coating; dropwise addition of the solution onto the spinning substrates enabled reproducible fabrication of such thin films, not only on the conventional Si/SiO2 substrate but also glass substrates with the gate dielectric consisting of AlOx/phosphonic acid self-assembled monolayers (SAMs). As a result, the present method realized fabrication of solution-processed TFTs with high mobility (> 1.0 cm(2) V-1 s(-1)), good environmental, operational, and thermal stability, and low-voltage operation (< 3.0 V), all of which are mostly comparable to those of the vapor-processed parent DNTT-TFTs. These results clearly indicate that 2-EO-DNTT is the solution-processable alternative of DNTT. (C) 2017 Elsevier B.V. All rights reserved.

Patternable solution-crystallized organic transistors are developed with high carrier mobility that exceeds 10 cm(2)/Vs. We have investigated techniques of crystallization during the fabrication of the organic semiconductor thin films from solution. Regulating direction of the crystal growth in the above process, we successfully formed crystalline films with the mobility as high as 10-12 cm(2)/Vs from newly developed air-stable organic semiconductor compounds of 2,7-dialkyl[1]benzothieno[3,2-b]benzothiophene (C-n-BTBT) and 2,9-dialkyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C-n-DNTT). Furthermore, comprehensive measurements of Hall-effect and temperature dependent mobility in the solution-crystallized single-crystal transistors tell us that their fundamental charge transport mechanism is band transport.