Olfactory receptor accessory proteins RTP1 and RTP2 play a crucial role in receptor gene choice, development and odor detection
CHEMICAL SENSES
Authors: Sharma, Ruchira; Ishimaru, Yoshiro; Davison, Ian; Ikegami, Kentaro; Matsunami, Hiroaki
Abstract
Study of capping layers, cleaning method and rapid thermal processing temperature on cobalt silicide formation
MULTILEVEL INTERCONNECT TECHNOLOGY III
Authors: Saigal, D; Lai, GG; Yang, L; Su, JG; Ngan, K; Narashiman, M; Chen, FS; Singhal, A; Lopes, D; Lian, S; Cao, WQ; Tsai, K; Lo, P; Lee, SK; Shih, J
Abstract
The effect of some key variables such as rapid thermal processing (RTP) temperature, substrate cleaning method and capping layers, on cobalt silicide formation has been investigated. The in-situ RF sputter etch is found to give a post RTP2 R-sh that is equivalent to a wet cleaned wafer. The temperature transformation curve of cobalt films, analyzed with R-sh data and XRD, reveal the formation of Co2Si-CoSi-CoSi2 phases in that order. The transformation curves of TiN capped films match those of blanket cobalt but the Ti capped films show the CoSi phase to be stable over a broader temperature range. There is no effect of dopants on the final cobalt disilicide R-sh values for either the single or polycrystalline substrates. Controlled oxygen leak studies in the RTP ambient reveal that the R-sh after RTP1 is degraded if a capping layer is not present. Electrical test results confirm the need for capping layers. This is indicated by lower R-sh and R-c values on both n+ and p+ junctions and poly structures. Furthermore the electrical results are comparable for Ti and TiN layers used as the cap films although the R-sh/R-c values are in general lower for the TiN capped films. Poly gate length vs R-sh plots show the extendibility of the capped cobalt silicide process to the 0.18um node.
COA
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