Anti-SAG polyclonal antibody

High performance InGaN micro-sin light-emitting diodes (mu LEDs) with epitaxial tunnel junctions (Ds) were successfully demonstrated using selective area growth (SAG) by metalorganic chemical vapor deposition (MOCVD). Patterned n + GaN/n-GaN layers with small holes were grown on top of standard InGaN blue LEDs to form Ds using SAG. TJ mu LEDs with squared mesa ranging from 10x10 to 100x1(X) mu m(2) were fabricated. The forward voltage (V-f) in the reference TJ mu LEDs without SAG is very high and decreases linearly from 4.6 to 3.7 V at 20 A/cm(2) with reduction in area from 10(XX) to 1(X) um(2), which is caused by the lateral out diffusion of hydrogen through sidewall. By contrast, the V-f at 20 A/cm(2) in the TJ mu LEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the V-f in the SAG TJ mu LEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG. The output power of SAG TJ mu LEDs is similar to 10% higher than the common mu LEDs with indium tin oxide (ITO) contact. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

The main bottleneck of fast forward modeling of 3-D land controlled-source electromagnetics based on the finite element method lies in solving multi-frequency large-scale sparse equations. In this paper, a Krylov subspace projection algorithm based on model reduction is introduced, a model reduction form of the finite element stiffness matrix is derived, and a frequency domain transfer function is constructed. A standard orthogonal vector sequence is used to construct a matrix that is much smaller than the finite element stiffness matrix, which is unrelated to frequency. Through model reduction, it is possible to quickly solve these multiple frequency finite element equations. The variational equation based on the electric field is used, and divergence correction conditions are added to eliminate spurious solutions. The pseudo-delta function is introduced to eliminate the singularity of the source point, which can be applied to 3D finite element numerical simulation of complex models. Such an algorithm may be regarded as the basic principle for a solution to the problem of multiple sources. Using the analytical solution of the layered medium model as the standard, comparison shows that the averaged percentage computing error of the proposed method is 1. 72%. Compared with the 3DFEM algorithm using the Pardiso direct solver, the CPU time consumption of the proposed method is reduced by 1/10 of the original one. Therefore, with a required accuracy, it is possible to achieve highly efficient 3-D finite element numerical solutions. In the numerical simulation, with the horizontal and vertical high-low resistance models, we analyze the changes of the electric field and the Cagniard apparent resistivity from the near to the far region, the performance characteristics of false extremes, and the effects of shadow effects, which verify the correctness of the proposed algorithm. Finally, we apply the proposed algorithm to simulation of a stratum collapse column model. The results show that the apparent resistivity cross section looks like a "sag" above the collapse column, which is consistent with the model design, and further indicates that the proposed algorithm can be applied to real complex geoelectric structure.