Anti-REL monoclonal antibody, clone FQS3660(3) Knockout Validated

Name: Anti-REL monoclonal antibody, clone FQS3660(3)
SKU: DCABH-2624
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Rabbit anti-Human REL monoclonal antibody for WB, IP

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COA

SDS

Datasheet

Summary

Specifications

Antibody Isotype

IgG

Clone

FQS3660(3)

Species Reactivity

Human

Immunogen

A synthetic peptide corresponding to residues within Human c-Rel was used as an immunogen (Q04864).

Conjugate

Unconjugated

Applications

Application Notes

WB: 1/10000 - 1/50000; IP: 1/10 - 1/100;

Target

Alternative Names

REL; v-rel reticuloendotheliosis viral oncogene homolog (avian); v rel avian reticuloendotheliosis viral oncogene homolog; proto-oncogene c-Rel; c Rel; I Rel; C-Rel proto-oncogene protein; oncogene REL, avian reticuloendotheliosis; v-rel avian reticuloend

Entrez Gene ID

5966

UniProt ID

Q04864

Product Background

Antigen Description

Proto-oncogene that may play a role in differentiation and lymphopoiesis. NF-kappa-B is a pleiotropic transcription factor which is present in almost all cell types and is involved in many biological processed such as inflammation, immunity, differentiation, cell growth, tumorigenesis and apoptosis. NF-kappa-B is a homo- or heterodimeric complex formed by the Rel-like domain-containing proteins RELA/p65, RELB, NFKB1/p105, NFKB1/p50, REL and NFKB2/p52. The dimers bind at kappa-B sites in the DNA of their target genes and the individual dimers have distinct preferences for different kappa-B sites that they can bind with distinguishable affinity and specificity. Different dimer combinations act as transcriptional activators or repressors, respectively. NF-kappa-B is controlled by various mechanisms of post-translational modification and subcellular compartmentalization as well as by interactions with other cofactors or corepressors. NF-kappa-B complexes are held in the cytoplasm in an inactive state complexed with members of the NF-kappa-B inhibitor (I-kappa-B) family. In a conventional activation pathway, I-kappa-B is phosphorylated by I-kappa-B kinases (IKKs) in response to different activators, subsequently degraded thus liberating the active NF-kappa-B complex which translocates to the nucleus. The NF-kappa-B heterodimer RELA/p65-c-Rel is a transcriptional activator.

Pathway

Activation of NF-kappaB in B Cells, organism-specific biosystem; Adaptive Immune System, organism-specific biosystem; Atypical NF-kappaB pathway, organism-specific biosystem; B Cell Receptor Signaling Pathway, organism-specific biosystem; Downstream Signaling Events Of B Cell Receptor (BCR), organism-specific biosystem; Immune System, organism-specific biosystem; Regulation of Androgen receptor activity, organism-specific biosystem;

Citations

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Documents

pdf COA

pdf SDS

pdf Datasheet

QA & Reviews

Customer Reviews

References

Excessive light-induced degradation in boron-doped Cz silicon PERC triggered by dark annealing

SOLAR ENERGY MATERIALS AND SOLAR CELLS

Authors: Fertig, F.; Lantzsch, R.; Fruehauf, F.; Kersten, F.; Schuetze, M.; Taubitz, C.; Lindroos, J.; Mueller, J. W.

Abstract

This work investigates the impact of annealing at elevated temperatures on the light-induced degradation (LID) of passivated emitter and rear cells (PERC) processed on boron-doped Czochralski-grown silicon substrates. The boron-oxygen (BO) defect has been stabilised prior to annealing and subsequent LID treatment. Excessive LID of up to 19.1 %(rel). is observed upon illumination after extended dark annealing at 150 degrees C for 552 h, which is well above the BO defect-related LID of 5.6 %(rel). measured upon illumination after cell processing if BO is not stabilised. Light and elevated Temperature Induced Degradation (LeTID), iron-boron pairs and surface recombination are excluded as root causes for the observed increased LID, which shows a similar behaviour as the BO defect but which cannot be explained by the well-established three-state model of the BO defect with the assumption of an empty regenerated state prior to BO stabilisation. Two speculative hypothesis for an explanation are (i) that further BO defect precursors are formed, which could be described via a reservoir or (ii) that a high percentage of the in-principle available BO defects are already in the stabilised state even without dedicated BO defect stabilisation. This increased LID does not occur when at least a small level of excess carrier concentration is induced during extended annealing and, hence, is expected not to occur during field operation. However, the observed behaviour is highly relevant for accelerated aging testing such as, e.g., damp heat testing during IEC and UL certification.

ENHANCED PIEZOELECTRIC AL(1-X)SC(X)N RF-MEMS RESONATORS FOR SUB-6 GHZ RF-FILTER APPLICATIONS: DESIGN, FABRICATION AND CHARACTERIZATION

2020 33RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2020)

Authors: Bogner, Andreas; Bauder, Ruediger; Timme, Hans-Joerg; Forster, Thomas; Reccius, Christian; Weigel, Robert; Hagelauer, Amelie M.

Abstract

This paper reports the design, fabrication and characterization of bulk acoustic wave (BAW) resonators of the SMR-type (surface mounted resonator) with highly c-axis oriented Al0.8SC0.2N thin-films. Various filter topologies have been demonstrated for high frequencies with sharp roll-off, wide bandwidth BW and low insertion loss IL (rel. 3dB-BW up to 9% and min. IL of 0.9dB to 1.5 dB at 2350 to 2550MHz). Furthermore, the challenges regarding the integration of Al1-XScX N for n79 applications (4400 to 5000 MHz) are indicated. The demonstrations show promising results regarding acoustic-only filters at 5G frequencies.