Mouse Anti-TGEV peplomer protein Monoclonal antibody, clone A8005

As electronic product becomes smaller and square density and high integration becomes stronger. Interposers for system in package will became more and more important for advanced electronic systems. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration; however, they are limited by high cost and high electrical loss. On the other hand, glass has many properties that make it an ideal substrate for interposer substrates such as; ultra high resistivity, adjustable thermal expansion (CTE) and manufacturability with large panel size. Furthermore, glass via formation capabilities have dramatically improved over the past several years. Fully populated wafers with > 100,000 through holes (50 mu m diameter) are fabricated today with 300 mu m thick glass. This paper presents the demonstration of silicon and glass interposers with fine pitch metalized through via. High frequency transmission characteristics were measured with TSV and TGV co planer wave guide. Twin types of Cu metalized method, full filling plating and conformal plating are compared with process capability, electrical characteristics and reliability.

Through glass vias (TGVs) is the core technology of three dimensional (3-D) integration. This paper extracts the equivalent electrical parameters of carbon nanotube (CNT) based TGVs and establishes the distributed transmission line model of ground-signal-signal-ground (GSSG) type TGV interconnects. Based on the proposed equivalent circuit model, the effect of various design parameters, such as via pitch, via radius and material properties on the electrical performance of TGV interconnects is evaluated. Due to the domination of conductor loss, it is seen that the electrical characterization of TGV interconnects is totally different from that of conventional through silicon vias (TSVs). Comparison in peak temperature using COMSOL shows that the thermal performance of 3-D integration with glass interposer is significantly improved by replacing copper with CNT in via application.