ASPS-AMERICAN SUBORBITAL PASSENGER SYSTEM-2005
IEEE AEROSPACE AND ELECTRONIC SYSTEMS MAGAZINE
Authors: WYCZALEK, FA
Abstract
With the evaporation of funding support for the National Aero Space Plane (NASP) [1], realization of a single stage to orbit flight system has been deferred. With the resource down sizing of the NASP management and technical team, development of the NASP concept appears to be delayed beyond the year 2030. To fill this gap for shorter flight times to remote destinations over 8,000 km, it is now proposed to convert the existing NASA shuttle to a passenger configuration and air launch horizontally from a Boeing 747 aircraft as the first stage carrier after climb to launch altitude. This US Shuttle concept may permit the transport of 100 passengers to destinations 10,000 km distant during a flight duration of 90 minutes, and during flight durations of about 120 minutes to any commercial destination on the planet Earth. This long distance system takes advantage of the existing shuttle and Boeing 747 airframe and propulsion technology, and can be implemented within the next decade.
Annealing experiments of the GaP based dilute nitride Ga(NAsP)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Authors: Kunert, B.; Trusheim, D.; VoBebuerger, V.; Volz, K.; Stolz, W.
Abstract
The post-growth annealing behaviour of Ga(NAsP) multi quantum well heterostructures (MQWHs) grown pseudomorphically strained to GaP substrate has been investigated. The optical properties as well as the structural crystal quality of the novel dilute nitride show an obvious dependence on the applied annealing temperature. Photoluminescence (PL) measurements reveal a step-like blue shift of the PL peak position in line with an increase of PL intensity with rising annealing temperature, The PL line width decreases to a minimal value for an optimized heating temperature around 800 degrees C. This annealing behaviour of the Ga(NAsP)/GaP-MQWHs up to 850 degrees C is quite typical for a dilute nitride, however, the functional dependence of the integrated intensity above 850 degrees C is unusual. The increase of the PL line width above 850 degrees C suggests a deterioration of the crystalline MQW quality, but transmission electron microscopy (TEM) and high resolution X-ray diffraction (XRD) prove the opposite.