Rabbit Anti-Human FICD Polyclonal antibody

Signals propagated in dispersive systems usually present multimodal and nonlinear group delay (GD) properties. The characterization of GDs and the signal decomposition are still challenging issues. Existing methods are mainly limited to identify monotonous GDs by estimating monotonous instantaneous frequencies. Bandpass filters are usually utilized to separate each mode, but the inherent defects of digital filters will decrease the reconstruction accuracy inevitably. In this paper, we propose the frequency domain intrinsic component decomposition method (FICD). On one hand, it can characterize nonlinear and non-monotonic GDs in frequency domain by using different kernel functions. On the other hand, the method itself can act as a time-frequency filter to separate and reconstruct each mode simultaneously. One of the advantages of our method is that it can deal with close or overlapped signals with high precision. Finally, simulated examples are provided to verify the effectiveness and efficiency. (C) 2018 Elsevier B.V. All rights reserved.

The ability to control critical dimensions of structures on semiconductor devices is essential to improving die yield and device performance. As geometries shrink, accuracy of the metrology equipment has increasingly become a contributing factor to the inability to detect shifts which result in yield loss. Scatterometry provides optical measurement that better enables process control of critical dimensions. Superior precision, accuracy, and higher throughput can be achieved more cost effectively through the use of this technology in production facilities. This paper outlines the implementation of Scatterometry based metrology in a production facility. The accuracy advantage it has over conventional Scanning Electron Microscope (SEM) measurement is presented. The Scatterometry tool used has demonstrated repeatability on the order of 3 sigma < 1 nm at STI-Etch-FICD for CD and Trench Depth (TD), and Side Wall Angle (SWA) measurements to within 0.1 degrees. Poly CD also shows 36 < 1 nm, and poly thickness measurement 3 sigma < 2.5 angstrom. Scatterometry has capabilities which include measurement of CD, structure height and trench depth, Sidewall angle (SWA), and film thickness. The greater accuracy and the addition of in-situ Trench depth and sidewall angle have provided new measurement capabilities. There are inherent difficulties in implementing scatterometry in production wafer fabs. Difficulties with photo resist measurements, film characterization and stack set-up will be discussed. In addition, there are challenges due to the quantity data generated; in how to organize and store this data effectively. A comparison of the advantages and shortcomings of the method are presented.