Anti-Esd polyclonal antibody

Electrostatic charging of hospital personnel and patients during various activities increases the risk of electrostatic discharge (ESD) malfunctions of medical devices and the likelihood of patients' adverse events. Therefore, the test level for ESD immunity of medical devices, specified in the IEC 60601-1-2 standard needs to reflect the reasonably maximum electrostatic voltages during usage. This study investigated the effects of material combinations and relative humidity on the body voltage while performing two routine clinical activities of lying down on a hospital bed and transferring to a bed using a sliding board. The peak body voltages in nearly 50% of the lying down experiments and 40% of sliding tests exceeded the test voltage level in the IEC 60601-1-2 standard (i.e., 15 kV). Using cotton blankets in lying down experiments and nylon sheets during sliding experiments resulted in 50% and 40% larger median than the median including all combinations, respectively. Sliding boards with antistatic coating reduced the peak body voltage by 24% on average, however, 33% of the tests still exceeded 15 kV. Based on the findings, recommendations are provided for healthcare facilities and medical device manufacturers to mitigate the risks of ESD malfunctions.

In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to use because of its inherent low holding voltage (V-h) and high triggering voltage (V-t1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate V-t1 of 6.3 V, high V-h of 4.2 V, high normalized second breakdown current (I-t2), which indicates the ESD protection robustness, of 13.3 mA/mu m, low normalized parasitic capacitance of 0.74 f F/mu m.