Magic™ Anti-MAPT monoclonal antibody (DCABH-2075)

Specifications


Host Species
Mouse
Antibody Isotype
IgG1
Clone
23H21
Species Reactivity
Human
Immunogen
Human Tau phosphorylated at Ser238
Conjugate
Unconjugated

Applications


Application Notes
WB: 1/200
*Suggested working dilutions are given as a guide only. It is recommended that the user titrates the product for use in their own experiment using appropriate negative and positive controls.

Target


Alternative Names
MAPT; microtubule-associated protein tau; DDPAC, MAPTL; FLJ31424; FTDP 17; G protein beta1/gamma2 subunit interacting factor 1
Entrez Gene ID
UniProt ID

Product Background


Pathway
Alzheimers disease, organism-specific biosystem; Alzheimers disease, conserved biosystem; Apoptosis, organism-specific biosystem; Apoptotic cleavage of cellular proteins, organism-specific biosystem; Apoptotic executionphase, organism-specific biosystem; Caspase-mediated cleavage of cytoskeletal proteins, organism-specific biosystem; IL-6 Signaling Pathway, organism-specific biosystem;

Citations


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Custom Antibody Labeling


We offer labeled antibodies using our catalogue antibody products and a broad range of intensely fluorescent dyes and labels including HRP, biotin, ALP, Alexa Fluor® dyes, DyLight® Fluor dyes, R-phycoerythrin (R-PE), at scales from less than 100 μg up to 1 g of IgG antibody. Learn More

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References


Chandra Observations of the Newly Discovered Magnetar Swift J1818.0-1607

ASTROPHYSICAL JOURNAL LETTERS

Authors: Blumer, Harsha; Safi-Harb, Samar

Swift J1818.0-1607 is a new radio-loud magnetar discovered by the Swift Burst Alert Telescope on 2020 March 12. It has a magnetic field B similar to 2.5 x 10(14) G, spin-down luminosity similar to 7.2 x 10(35) erg s(-1), and characteristic age tau(c) similar to 470 yr. Here we report on the Chandra observations of Swift J1818.0-1607, which allowed for a high-resolution imaging and spectroscopic study of the magnetar and its environment. The 1-10 keV spectrum of the magnetar is best described by a single blackbody model with a temperature of 1.2 0.1 keV and an unabsorbed flux of 1.9(-0.3)(+0.4) x 10(-11) erg cm(-2) s(-1). This implies an X-ray luminosity of 9.6(-1.5)(+2.0)x10(34) d(6.5)(2) erg s(-1) and efficiency of d(6.5)(2) at a distance of 6.5 kpc. The Chandra image also shows faint diffuse emission out to from the magnetar, with its spectrum adequately described by a power law with a photon index of 2.0 0.5 and a luminosity of similar to 8.1 x 10(33)B pulsars and magnetars, and could be powered at least partly by its high spin-down, similar to rotation-powered pulsars.

Study of the properties of SiOx layers prepared by different techniques for rear side passivation in TOPCon solar cells

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Authors: Mandal, Nabin Chandra; Biswas, Susmita; Acharya, Shiladitya; Panda, Tamalika; Sadhukhan, Sourav; Sharma, Jayasree Roy; Nandi, Anupam; Bose, Sukanta; Kole, Arindam; Das, Gourab; Maity, Santanu; Chaudhuri, Partha; Saha, Hiranmay

Passivation of n-type and p-type monocrystalline CZ Si wafers (both polished and textured) with silicon oxide layers prepared by thermal (TO), chemical (CO) and plasma (PO) techniques have been extensively investigated from the measurement of minority carrier lifetime (tau) by transient electrical photo-response method, density of interface states (N-SS) measurement by capacitance - voltage study and silicon oxidation states by X-ray photoelectron spectroscopy (XPS) study of the SiO2/Si interface. It has been observed that N-SS and tau have an inverse relation but the dependence is not linear. The method (TO, CO or PO) of oxide layer development has been found to play a crucial role to control the passivation of the c-Si wafer surface. It has been observed that the thermally grown oxide layer (TO) is superior among three oxide layers for all the different c-Si surfaces. Very low density of interface states (<5 x 10(11)) were found in both p-type and n-type polished wafer passivated with TO layer. Highest lifetimes of 170 mu s for n-type polished wafer and 102.74 mu s for p-type polished wafer were obtained with TO. The amount of sub oxide formed at the interface of both n- and p-type of wafers during different oxidation process, may have some correlation with N-SS which in turn determines the passivation quality of the wafers. Improvement of implied V-OC for both polished and textured wafers (n-type and p-type) was found using thermally grown oxide with respect to others.

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