The effect of food availability on thermal stress inDaphnia magna: trade-offs among oxidative stress, somatic growth, and reproduction
AQUATIC ECOLOGY
Authors: Im, Hyungjoon; Na, Joorim; Jung, Jinho
Abstract
The effects of food availability on thermal stress inDaphnia magnawere investigated for 21 days, with a hypothesis that lower food condition would increase the adverse effect of elevated temperature onD. magna. Under higher food conditions (5 x 10(5) cells mL(-1)), elevated temperature (25 degrees C) did not induce higher oxidative stress (levels of antioxidant enzymes and lipid peroxidation) than reference temperature (20 degrees C). Thus, reproduction (number of offspring per female) was significantly (p < 0.05) higher at 25 degrees C compared with that at 20 degrees C. Under lower food condition (2 x 10(5) cells mL(-1)), however, elevated temperature significantly (p < 0.05) induced antioxidant enzyme activity (superoxide dismutase and catalase) and reduced adult somatic growth rate (5-21 days), whereas there was no significant change in reproduction between the two temperature groups. These findings suggest that food availability greatly influences the effect of elevated temperature onD. magna, possibly resulting in a trade-off among oxidative stress defense, somatic growth, and reproduction.
Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition
JOURNAL OF ELECTRONIC MATERIALS
Authors: Xu, Yongkang; Hu, Yifeng; Sun, Song; Lai, Tianshu
Abstract
V2O5 and Ge2Sb2Te5 (GST) films have been prepared by magnetron sputtering, and their transformation from amorphous to crystalline state studied by in situ resistance temperature measurements. During the heating process, a two-step transition was observed for both films, revealing three resistances corresponding to amorphous, intermediate, and crystalline states. The two phase-transition temperatures were 371.1 degrees C and 394.0 degrees C for V2O5, much higher than the values of similar to 172.4 degrees C and 240.4 degrees C for GST. Compared with GST, the resistance of V2O5 was two orders of magnitude higher. The changes in the resistance and bandgap of V2O5 and GST during phase transition were investigated in detail. A phase-change memory device based on V2O5 was fabricated. Compared with GST, V2O5 exhibited a lower operating power and shorter phase-transition time. The application potential of V2O5 and GST for multilevel storage was compared.